Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes

Magnetic tunnel junctions have been the subject of study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance match...

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Bibliographic Details
Published inElectronics letters Vol. 36; no. 21; pp. 1782 - 1783
Main Authors Boeve, H, Sousa, R C, Freitas, P P, De Boeck, J, Borghs, G
Format Journal Article
LanguageEnglish
Published 12.10.2000
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ISSN0013-5194
DOI10.1049/el:20001242

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Summary:Magnetic tunnel junctions have been the subject of study for use in nonvolatile magnetic memories. To cancel leakage paths in the memory array, a semiconductor switch is integrated per cell. Successful integration with GaAs diodes, dominating the cell performance, is described. Good resistance matching between both elements is essential to optimize the output characteristics, i.e. the absolute voltage or current difference between the two magnetic states.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0013-5194
DOI:10.1049/el:20001242