A 0.18 mu m foundry RF CMOS technology with 70GHz FT for single chip system solutions

• Published in: IEEE MTT-S International Microwave Symposium digest Vol. 1; pp. 1869 - 1872
• Main Authors: Chen, C W, Peng, K R, Ma, S P, Chen, C H, Yeh, T H, Lin, C H, Sun, Y C, Chang, C Y, Hsu, Heng-Ming, Chang, Jui-Yu, Su, Jiong-Guang, Tsai, Chao-Chieh, Wong, Shyh-Chyi
• Format: Journal Article
• Language: English
• Published: 01.01.2001
• ISSN: 0149-645X

This paper presents a high performance RFCMOS technology with a complete portfolio of RF and base band components for single-chip systems. Using optimized CMOS topology and deep n-well, we obtain a F sub(t) of 60GHz and F sub(max) of 55GHz at 10mA, a F sub(t) of 70GHz and F sub(max) of 58GHz at maximum-transconductance bias, and a minimum noise figure of 1.5dB without ground-shielded signal pad. High quality-factor inductors are obtained using Copper interconnect giving a quality factor of 18 at 1.7nH. MIM capacitors, as well as accumulation and junction varactors are also optimized for enhancing quality factor. For the purpose of eliminating inter-block coupling noise penetrating through substrate, a deep n-well isolation and p-ring have been adopted to suppress the substrate noise by 25dB and 10dB respectively. This technology provides a complete solution for single-chip wireless systems.