Ge2Sb2Te5 THIN FILM DOPED WITH SILVER

• Published in: Japanese Journal of Applied Physics, Part 1 Vol. 42; no. 2B; pp. 1026 - 1028
• Main Authors: Lie, C-T, Kuo, P-C, Hsu, W-C, Wu, T-H, Chen, P-W, Chen, S-C
• Format: Journal Article
• Language: English
• Published: 2003
• ISSN: 0021-4922
• DOI: 10.1143/jjap.42.1026

(Ge2Sb2Te5)100-XAgX films (where x=0 approximately equals 3 at.%) with 100 nm thickness were deposited on natural-oxidized Si wafer and glass substrates by dc magnetron co-sputtering of Ge2Sb2Te5 and Ag targets. The effects of Ag content on the optical properties of the (Ge2Sb2Te5)100-XAgX film were examined by XRD, reflectivity and crystalline temperature analysis. Reflectivity and thermal properties of the Ge2Sb2Te5 film could be improved by doping a small amount of Ag in the Ge2Sb2Te5 film. The crystallization activity energy of the film decreased as the Ag content was increased. However, the crystalline temperature of the film increased with Ag content. The phase-transition temperature of the fcc to hcp phase increased to at least 450 C as x > 0.3. Authors found that the contrast of (Ge2Sb2Te5)98.2Ag1.8 film is suitable for blue laser wavelength recording. 7 refs.