Improved hot-carrier immunity in CMOS analog device with N2O-nitrided gate oxides

This paper reports on the hot-carrier effects on analog device performance parameters in CMOS devices with N2O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show t...

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Bibliographic Details
Published inIEEE electron device letters Vol. 13; no. 9; pp. 457 - 459
Main Authors Lo, G Q, Ahn, J, KWONG, D I M-L E E
Format Journal Article
LanguageEnglish
Published 01.09.1992
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Summary:This paper reports on the hot-carrier effects on analog device performance parameters in CMOS devices with N2O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that N2O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFET's. In addition, comparison analog and digital device performance degradations has also been made. (Author)
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0741-3106
DOI:10.1109/55.192793