Tunability in the optoelectrical performance of n-SnS(1−x)Sex thin films for photovoltaic applications

• Published in: New journal of chemistry Vol. 47; no. 42; pp. 19716 - 19725
• Main Authors: Nisha, Sarkar, Prosenjit, Kumar, Pawan, Katiyar, Ram S
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 30.10.2023
• Subjects: Absorption spectra; Electron mobility; Electrons; Glass substrates; Hall effect; Photoelectrons; Photovoltaic cells; Raman spectroscopy; Solar cells; Spectrum analysis; Ternary alloys; Thin films; Two dimensional materials; X ray photoelectron spectroscopy
• ISSN: 1144-0546; 1369-9261
• DOI: 10.1039/d3nj03296e

2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics. SnS1−xSex alloy films have garnered attention from researchers over the last few decades due to their tunable physical features. Here, we report the successful preparation of SnS1−xSex powder using a temperature-assisted mechanochemical process and their subsequent deposition on glass substrates via thermal evaporation. X-ray diffraction (XRD) and Raman spectroscopy were used to extensively analyse SnS1−xSex thin films, elucidating their structural characteristics. The presence of a ternary alloy has been verified by both energy dispersive X-ray spectroscopy (EDAX) and X-ray photoelectron spectroscopy (XPS). The absorption spectrum shows that TSSe thin films have great potential for absorbing a wide range of visible light. Hall measurement revealed that n-type TSSe thin films have shown great promise with the highest hall mobility of up to 16.7 cm2 V−1 s−1. Our study demonstrates that TSSe has excellent potential as a 2D material for cutting-edge photovoltaic applications.