Preparation and photoelectric properties of the polycrystalline silicon solar cells depositing Sb2Ox nano-films

Sb2Ox nano-film/c-Si composite solar cells were prepared by the spin-coating method. The absorption efficiency, the minority carrier lifetime, and the internal/external quantum efficiency of Sb2Ox/c-Si solar cells had a significant improvement because Sb2Ox nano-film, as a wide band gap (~3.44 eV) s...

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Bibliographic Details
Published inCritical studies in media communication Vol. 75; no. 4; p. 295
Main Authors Zhou, Lingling, Wu, Shengyao, Zhang, Xing, Liu, Jie, Yu, Xibin
Format Journal Article
LanguageEnglish
Published Collingwood CSIRO 01.04.2022
Subjects
Carrier lifetime
Chemistry
Efficiency
Energy conversion efficiency
Heterojunctions
Light
Minority carriers
Morphology
Nanoparticles
Photoelectric effect
Photoelectricity
Photovoltaic cells
Polycrystals
Polysilicon
Quantum efficiency
Silicon substrates
Silicon wafers
Solar cells
Solar energy
Spin coating
Surfactants
Test systems
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Summary:Sb2Ox nano-film/c-Si composite solar cells were prepared by the spin-coating method. The absorption efficiency, the minority carrier lifetime, and the internal/external quantum efficiency of Sb2Ox/c-Si solar cells had a significant improvement because Sb2Ox nano-film, as a wide band gap (~3.44 eV) semiconductor, had an excellent photoelectrical performance, and could form an effective heterojunction with the silicon substrate. Sb2Ox nano-films deposited on the c-Si wafers reduced the loss of the solar light, absorbed the high-energy photons, accelerated the transmission and separation of the photo-generated carriers, and suppressed the recombination of the minority carriers effectively. Thus the power conversion efficiency was improved from 12.8 to 15.3% in Sb2Ox/c-Si solar cells, which was enhanced by 19.53% compared to the untreated polycrystalline silicon solar cells.
ISSN:1529-5036
DOI:10.1071/CH21276