Effect of SiO2 thickness on dielectric breakdown defect density due to surface crystal-originated particles

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 150; no. 3; pp. F42 - F46
Main Authors YAMABE, Kikuo, SHIMADA, Yasuhiro, MIN PIAO, YAMAZAKI, Tohru, OTSUKI, Tsuyoshi, TAKEDA, Ryuji, OHTA, Yasumitsu, JIMBO, Susumu, WATANABE, Masaharu
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.03.2003
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
Voids
Defect density
Electric breakdown
Surface defect
Silicon oxides
Electric field effects
Dielectric properties
Dielectric thin films
Czochralski method
Experimental study
Chemical mechanical polishing
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1541008