Electrical and Optical Properties of a Cu2O/β‐Ga2O3 pn‐Junction

A pn‐heterojunction is fabricated by depositing an n‐type β‐Ga2O3 film by pulsed laser deposition (PLD) on c‐cut Al2O3. P‐type cuprous oxide films, Cu2O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 221; no. 10
Main Authors Khartsev, Sergiy, Sarakovskis, Anatolijs, Grinberga, Liga, Hammar, Mattias, Nordell, Nils, Hallén, Anders
Format Journal Article
LanguageEnglish
Published Weinheim Wiley Subscription Services, Inc 01.05.2024
Subjects
Aluminum oxide
Copper oxides
Electrical measurement
Gallium oxides
Heterojunctions
Magnetron sputtering
Optical activity
Optical properties
Oxide coatings
Photoelectrons
Pulsed laser deposition
Pulsed lasers
Ultraviolet radiation
Valence band
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Summary:A pn‐heterojunction is fabricated by depositing an n‐type β‐Ga2O3 film by pulsed laser deposition (PLD) on c‐cut Al2O3. P‐type cuprous oxide films, Cu2O, are then deposited by PLD, as well as by radio frequency (RF) magnetron sputtering. It is concluded that hole injection is prohibited by a 3.26 eV valence band barrier, as measured by X‐ray photo‐electron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Heterojunction diode structures are prepared on the front side and electrical measurements demonstrate a rectification ration of 8 orders of magnitude and an ideality factor close to 2, indicating interface recombination‐controlled forward current. The junction is also optically active and shows a very fast photo‐response to 275 nm UV light.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202300958