Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 38; no. 2; pp. 262 - 269
Main Authors LASKY, J. B, NAKOS, J. S, CAIN, O. J, GEISS, P. J
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.02.1991
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Phase transformation
Microelectronic fabrication
Titanium Silicides
Transmission electron microscopy
Charge carrier scattering
Memory
Cobalt Silicides
Doping
Electric resistivity
Agglomeration
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ISSN:0018-9383
1557-9646
DOI:10.1109/16.69904