Photoluminescence of quasi-direct transitions in disordered In1-xGaxP/graded GaP alloys

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 33; no. 7; pp. 1123 - 1131
Main Authors FU, L. P, CHTCHEKINE, D. G, GILLILAND, G. D, LEE, H, HJALMARSON, H. P, YU, J. G, CRAFORD, M. G, WOLFORD, D. J
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.07.1997
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Level crossing
Temperature dependence
Band structure
Disordered systems
Inorganic compounds
Semiconductor materials
Ternary compounds
Photoluminescence
Experimental study
Luminescence decay
Gallium phosphides
Energy-level transitions
Lifetime
Electronic structure
Indium phosphides
Chemical composition
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More Information
ISSN:0018-9197
1558-1713
DOI:10.1109/3.594874