Electrical properties of Si p+-n junctions for sub-0.25 μm CMOS fabricated by Ga FIB implantation
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Published in | IEEE transactions on electron devices Vol. 40; no. 10; pp. 1823 - 1829 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.10.1993
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Subjects | |
Online Access | Get full text |
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ISSN: | 0018-9383 1557-9646 |
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DOI: | 10.1109/16.277340 |