Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

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Bibliographic Details
Published inSemiconductor science and technology Vol. 12; no. 1; pp. 59 - 63
Main Authors ANDRIANOV, A. V, LACKLISON, D. E, ORTON, J. W, CHENG, T. S, FOXON, C. T, O'DONNELL, K. P, NICHOLLS, J. F. H
Format Journal Article
LanguageEnglish
Published Bristol Institute of Physics 1997
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Thin films
Temperature dependence
Inorganic compounds
Gallium nitrides
Photoluminescence
Experimental study
Acceptors
Deep level
III-V semiconductors
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/12/1/012