Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions
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Published in | Superlattices and microstructures Vol. 24; no. 1; pp. 105 - 110 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English Russian |
Published |
Oxford
Elsevier
1998
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Online Access | Get full text |
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ISSN: | 0749-6036 1096-3677 |
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DOI: | 10.1006/spmi.1996.0216 |