Electron channel with high carrier mobility at the interface of type-II broken-gap p-GaInAsSb/p-InAs single heterojunctions

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 24; no. 1; pp. 105 - 110
Main Authors MIKHAILOVA, M. P, VORONINA, T. I, LAGUNOVA, T. S, MOISEEV, K. D, OBUKHOV, S. A, ROZOV, A. E, YAKOVLEV, Yu. P
Format Journal Article
LanguageEnglish
Russian
Published Oxford Elsevier 1998
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ISSN:0749-6036
1096-3677
DOI:10.1006/spmi.1996.0216