Photo-induced intersubband absorption in Si/SiGe quantum wells

• Published in: Journal of crystal growth Vol. 157; no. 1-4; pp. 227 - 230
• Main Authors: BOUCAUD, P, GAO, L, VISOCEKAS, F, MOUSSA, Z, LOURTIOZE, J.-M, JULIEN, F.-H, SAGNES, I, CAMPIEDELLI, Y, BADOZ, P.-A, VAGOS, P
• Format: Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier 02.12.1995
• Subjects: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations); Collective excitations (including plasmons and other charge-density excitations); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Elemental semiconductors and insulators; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Surface and interface electron states; Polarization; Valence bands; Fourier transformation; Inorganic compounds; Semiconductor materials; Energy levels; Interband transitions; Quantum wells; Doped materials; Binary compounds; Photoinduced effect; Subband; Infrared spectra; Experimental study; Germanium silicides; Boron additions; Silicon; Absorption spectra
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(95)00408-4