Dynamics of a charged fluctuator in an Al-AlOx-Al single-electron transistor

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Bibliographic Details
Published inJournal of low temperature physics Vol. 123; no. 1-2; pp. 103 - 126
Main Authors KENYON, M, COBB, J. L, AMAR, A, SONG, D, ZIMMERMAN, N. M, LOBB, C. J, WELLSTOOD, F. C
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 01.04.2001
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Two level system
Electron scattering
Inelastic scattering
Bias voltage
Self heating
Experimental study
Electric fluctuation
Modeling
Random telegraph noise
Single electron transistors
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ISSN:0022-2291
1573-7357
DOI:10.1023/A:1017597515748