Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions

Saved in:
Bibliographic Details
Published inJournal of electronic materials Vol. 27; no. 12; p. 1296
Main Authors Downey, Daniel F, Marcus, Steven D, Chow, Judy W
Format Journal Article
LanguageEnglish
Published Warrendale Springer Nature B.V 01.12.1998
Online AccessGet full text

Cover

More Information
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-998-0089-0