Reliability limits for the gate insulator in CMOS technology

Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the quality and reliability of ultrathin dielectrics to assume greater importance. This paper reviews the physics and statistics of dielectric wearout and breakdown in ultrathin SiO2-based gate dielectrics.

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Bibliographic Details
Published inIBM journal of research and development Vol. 46; no. 2-3; pp. 265 - 286
Main Author Stathis, J H
Format Journal Article
LanguageEnglish
Published Armonk International Business Machines Corporation 01.03.2002
Subjects
Circuits
CMOS
Microelectronics
Physics
Reliability
Silicon
Transistors
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Summary:Aggressive scaling of the thickness of the gate insulator in CMOS transistors has caused the quality and reliability of ultrathin dielectrics to assume greater importance. This paper reviews the physics and statistics of dielectric wearout and breakdown in ultrathin SiO2-based gate dielectrics.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-8646
2151-8556
DOI:10.1147/rd.462.0265