Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique

NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force micros...

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Bibliographic Details
Published inAIP conference proceedings Vol. 2995; no. 1
Main Authors Sahu, Bhabani Prasad, Yadav, Santosh Kumar, Dhar, Subhabrata
Format Journal Article Conference Proceeding
LanguageEnglish
Published Melville American Institute of Physics 12.01.2024
Subjects
Epitaxial growth
Low temperature
Morphology
Nickel oxides
Pulsed laser deposition
Pulsed lasers
Sapphire
Substrates
Temperature dependence
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Summary:NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force microscopy, which shows smooth and continuous morphology with root mean square (RMS) roughness less than 2 nm. Resistivity of the film is observed to depend strongly on the growth temperature. This has been attributed to the growth temperature dependent variation of Ni vacancy concentration in the film.
Bibliography:ObjectType-Conference Proceeding-1
SourceType-Conference Papers & Proceedings-1
content type line 21
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0178400