Dy3+ Doped All‐Inorganic Perovskite Nanocrystals Glass toward High‐Performance and High‐Stability Silicon Photodetectors
Silicon (Si) photodetectors (PDs) have attracted more attention due to their wide applications, but are limited by their extremely weak ultraviolet (UV) photo‐response. Herein, Dy3+‐CsPbCl2Br1 nanocrystals glass (Dy3+‐CPCB NCsG) is synthesized in borosilicate glass by traditional melt‐quenching. The...
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Published in | Laser & photonics reviews Vol. 17; no. 5 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
Wiley Subscription Services, Inc
01.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Silicon (Si) photodetectors (PDs) have attracted more attention due to their wide applications, but are limited by their extremely weak ultraviolet (UV) photo‐response. Herein, Dy3+‐CsPbCl2Br1 nanocrystals glass (Dy3+‐CPCB NCsG) is synthesized in borosilicate glass by traditional melt‐quenching. The doping of Dy3+ exceedingly improves the PL intensity of CsPbCl2Br1 nanocrystals glass (CPCB NCsG) with enhancing photoluminescence quantum yield from 8.0% to 30.2%, ascribed to the improved crystallinity and reduced defects. Meanwhile, the stability of CPCB NCsG exposed to air, light, and high temperature is largely boosted. After integrating with Dy3+‐CPCB NCsG, the responsivity, external quantum efficiency, detectivity, and stability of Si PDs are significantly enhanced. The responsivity (R) of Si PDs‐5% Dy3+‐CPCB NCsG is 0.006 A W−1 at 320 nm, which is sixfold higher than that of bare Si PDs. This work develops a blue Dy3+‐CPCB NCsG, which has great potential as a new luminescent material for the next generation of Si PDs.
Silicon (Si) photodetectors have received much attention for their wide range of applications, but are limited by their extremely weak UV light response. The doping of Dy3+ greatly improves the photoluminescence quantum yield of CsPbCl2Br1 nanocrystalline glasses (NCsG). Meanwhile, after integration with Dy3+‐CsPbCl2Br1 NCsG, the responsiveness, external quantum efficiency, detection, and stability of Si photodetectors are significantly improved. |
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ISSN: | 1863-8880 1863-8899 |
DOI: | 10.1002/lpor.202200748 |