Effect of strain on GaAs1-x-yNxBiy/GaAs to extract the electronic band structure and optical gain by using 16-band kp Hamiltonian

• Published in: Bulletin of materials science Vol. 42; no. 3; p. 87
• Main Authors: Sharma, Arvind, Das, T D
• Format: Journal Article
• Language: English
• Published: Bangalore, India Indian Academy of Sciences 01.06.2019; Springer Nature B.V
• Subjects: Alloys; Band structure of solids; Chemistry and Materials Science; Energy; Energy levels; Engineering; Gallium arsenide; Lattice matching; Lattice parameters; Materials Science; Mathematical models; Molecular beam epitaxy; Optical properties; Photovoltaic cells; Quantum wells; Solar cells; Solid state lasers; strain; method; optical gain
• ISSN: 0250-4707; 0973-7669
• DOI: 10.1007/s12034-019-1793-5

GaAs 1 - x - y N x Bi y is a suitable candidate for 1.06 μ m solid state lasers and high-efficiency solar cells. Mathematical models such as 16-band kp model is used to study the band structure, strain generated effect, band offset and variation of their parameters with Bi and N concentrations. Lattice constants of alloy GaAs 1 - x - y N x Bi y with x / y = 0.58 can match those of GaAs with the incorporation of Bi and N into GaAsNBi. Arsenic atom substitution due to the incorporation of N and Bi impurity atoms causes a significant band gap reduction of ∼ 200 meV for GaAs 0.937 N 0.023 Bi 0.04 alloys under lattice-matched conditions and in addition, by tuning the concentrations of N and Bi, the electrical and optical properties of GaAsNBi can be controlled. Optical gain of GaAs 1 - x - y N x Bi y quantum well (QW) and GaAs as a barrier are calculated in generalized mode and observed the effect of the energy level of GaAs barrier on the GaAsNBi QW.