PVK/Alq3 organic light emitting diodes obtained by evaporation

Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq^sub 3^) bilayer diodes were deposited by vacuum evaporation onto SnO^sub 2^ coated glass substrates. After deposition of an aluminum upper electrode, the diodes were studied by current-voltage (I-V) and electroluminescence-voltage (...

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Published inJournal of materials science. Materials in electronics Vol. 15; no. 9; pp. 579 - 582
Main Authors OURO DJOBO, S, BERNEDE, J. C, KOSSI, Napo
Format Journal Article
LanguageEnglish
Published Norwell, MA Springer 01.09.2004
Springer Nature B.V
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Abstract Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq^sub 3^) bilayer diodes were deposited by vacuum evaporation onto SnO^sub 2^ coated glass substrates. After deposition of an aluminum upper electrode, the diodes were studied by current-voltage (I-V) and electroluminescence-voltage (EL-V) measurements. It is shown that the luminescence of the structures should be attributed to Alq^sub 3^. However the presence of evaporated PVK allows us to decrease the barrier height at the interface SnO^sub 2^/PVK because of the localized states induced in the PVK band gap during the evaporation which allows multistep tunneling effect. The optimum Alq^sub 3^ thickness is shown to be about 75 nm.[PUBLICATION ABSTRACT]
AbstractList Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq^sub 3^) bilayer diodes were deposited by vacuum evaporation onto SnO^sub 2^ coated glass substrates. After deposition of an aluminum upper electrode, the diodes were studied by current-voltage (I-V) and electroluminescence-voltage (EL-V) measurements. It is shown that the luminescence of the structures should be attributed to Alq^sub 3^. However the presence of evaporated PVK allows us to decrease the barrier height at the interface SnO^sub 2^/PVK because of the localized states induced in the PVK band gap during the evaporation which allows multistep tunneling effect. The optimum Alq^sub 3^ thickness is shown to be about 75 nm.[PUBLICATION ABSTRACT]
Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq3) bilayer diodes were deposited by vacuum evaporation onto SnO2 coated glass substrates. After deposition of an aluminum upper electrode, the diodes were studied by current-voltage (I-V) and electroluminescence-voltage (EL-V) measurements. It is shown that the luminescence of the structures should be attributed to Alq3. However the presence of evaporated PVK allows us to decrease the barrier height at the interface SnO2/PVK because of the localized states induced in the PVK band gap during the evaporation which allows multistep tunneling effect. The optimum Alq3 thickness is shown to be about 75 nm.
Author OURO DJOBO, S
KOSSI, Napo
BERNEDE, J. C
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Issue 9
Keywords Localized state
Voltage current curve
Tunnel effect
Aluminium complex
Luminance voltage characteristic
Carbazole(vinyl) polymer
Manufacturing process
Size effect
Organic light emitting diodes
Optoelectronic device
Barrier height
Vacuum deposition
Bilayers
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Snippet Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq^sub 3^) bilayer diodes were deposited by vacuum evaporation onto SnO^sub 2^ coated glass...
Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq3) bilayer diodes were deposited by vacuum evaporation onto SnO2 coated glass substrates....
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StartPage 579
SubjectTerms Applied sciences
Electronics
Exact sciences and technology
Glass substrates
Optoelectronic devices
Organic light emitting diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Title PVK/Alq3 organic light emitting diodes obtained by evaporation
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