PVK/Alq3 organic light emitting diodes obtained by evaporation

• Published in: Journal of materials science. Materials in electronics Vol. 15; no. 9; pp. 579 - 582
• Main Authors: OURO DJOBO, S, BERNEDE, J. C, KOSSI, Napo
• Format: Journal Article
• Language: English
• Published: Norwell, MA Springer 01.09.2004; Springer Nature B.V
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Glass substrates; Optoelectronic devices; Organic light emitting diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Localized state; Voltage current curve; Tunnel effect; Aluminium complex; Luminance voltage characteristic; Carbazole(vinyl) polymer; Manufacturing process; Size effect; Organic light emitting diodes; Optoelectronic device; Barrier height; Vacuum deposition; Bilayers
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1023/B:JMSE.0000036036.12568.ab

Poly(N-vinycarbazole) (PVK)/tris(8-hydroxy)-quinoline-aluminum (Alq^sub 3^) bilayer diodes were deposited by vacuum evaporation onto SnO^sub 2^ coated glass substrates. After deposition of an aluminum upper electrode, the diodes were studied by current-voltage (I-V) and electroluminescence-voltage (EL-V) measurements. It is shown that the luminescence of the structures should be attributed to Alq^sub 3^. However the presence of evaporated PVK allows us to decrease the barrier height at the interface SnO^sub 2^/PVK because of the localized states induced in the PVK band gap during the evaporation which allows multistep tunneling effect. The optimum Alq^sub 3^ thickness is shown to be about 75 nm.[PUBLICATION ABSTRACT]