Large phase shifts in As2S3 waveguides for all-optical processing devices

A large phase shift of 4.7pi at 1.53 microm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 microm, far below the material b...

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Bibliographic Details
Published inOptics letters Vol. 30; no. 19; p. 2605
Main Authors Ruan, Yinlan, Luther-Davies, Barry, Li, Weitang, Rode, Andrei, Kolev, Vesslin, Madden, Steve
Format Journal Article
LanguageEnglish
Published United States 01.10.2005
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Summary:A large phase shift of 4.7pi at 1.53 microm has been observed from a low-loss (0.2 dB/cm), small-core As2S3 waveguide fabricated by dry etching. The strength of the nonlinear response was limited by photosensitivity and photocrystallization of the As2S3 films at 1.53 microm, far below the material bandgap.
ISSN:0146-9592
DOI:10.1364/OL.30.002605