High-power Ge photodetector for silicon photonics has a 35 GHz bandwidth

Silicon (Si) photonic circuits are now widely used for optical interconnects and are being actively developed for many communications, instrumentation, and scientific applications. Active photonic circuit components that, like Si, are made of IV semiconductors--in particular, germanium (Ge)--are eas...

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Bibliographic Details
Published inLaser focus world Vol. 52; no. 7; p. 7
Main Author Anon
Format Magazine Article
LanguageEnglish
Published Tulsa Endeavor Business Media 01.07.2016
Subjects
Arsenic
Bandwidth
Bandwidths
Circuits
Communication
Gallium
Germanium
Instrumentation
Photodetectors
Photonics
Semiconductors
Silicon
Online AccessGet full text
ISSN1043-8092

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Summary:Silicon (Si) photonic circuits are now widely used for optical interconnects and are being actively developed for many communications, instrumentation, and scientific applications. Active photonic circuit components that, like Si, are made of IV semiconductors--in particular, germanium (Ge)--are easier to integrate than are other semiconductors such as III-V semiconductors (gallium arsenide and so on). As a result, Ge photodetectors, and in particular Ge waveguide coupling detectors, are the subject of much research to improve their bandwidth and saturation power.
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ISSN:1043-8092