Optical properties of magnesium doped AlxGa1−xN (0.61 ≤ x ≤ 0.73)
We investigate the optical properties of AlxGa1–xN:Mg with aluminum content of 0.61 ≤ x ≤ 0.733 in comparison to undoped and silicon doped reference samples. The ordinary dielectric functions, excitation, and emission spectra are reported at different temperatures. A comprehensive analysis yields qu...
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Published in | Journal of applied physics Vol. 116; no. 14 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
14.10.2014
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Subjects | |
Online Access | Get full text |
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Summary: | We investigate the optical properties of AlxGa1–xN:Mg with aluminum content of 0.61 ≤ x ≤ 0.733 in comparison to undoped and silicon doped reference samples. The ordinary dielectric functions, excitation, and emission spectra are reported at different temperatures. A comprehensive analysis yields quantitative data on the valence band structure of the ternary alloy, i.e., splitting and order of valence bands with different symmetries. Finally, the near band gap emission in AlGaN:Mg is found to be most probably dominated by donor to free-hole recombination. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.4897449 |