Zinc diffusion in InAsP/InGaAs heterostructures

A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In sub(0.53)Ga sub(0.47)As, In sub(0.70)Ga sub(0.30)As, In sub(0.82)Ga sub(0.18)As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques, electroche...

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Bibliographic Details
Published inJournal of electronic materials Vol. 28; no. 12; pp. 1433 - 1439
Main Authors Ettenberg, Martin H, Lange, Michael J, Sugg, Alan R, Cohen, Marshall J, Olsen, Gregory H
Format Journal Article
LanguageEnglish
Published 01.12.1999
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Summary:A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In sub(0.53)Ga sub(0.47)As, In sub(0.70)Ga sub(0.30)As, In sub(0.82)Ga sub(0.18)As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques, electrochemical profiling, and secondary ion mass spectroscopy. The diffusion coefficients, D identical with D sub(o)e super(-E(a)/kT), were derived. For InP, D sub(0) identical with 4.82x10 super(-2) cm super(2)/sec and E sub(a) identical with 1.63 eV and for In sub(0.53)Ga sub(0.47)As, D sub(0) identical with 2.02x10 super(4) cm super(2)/sec and E sub(a) identical with 2.63 eV. Diffusion into the heteroepitaxial structures used in the fabrication of planar PIN photodiodes is dominated by the effects of the InP/InGaAs interface.
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ISSN:0361-5235
DOI:10.1007/s11664-999-0136-5