Molecular transport junctions : vibrational effects

• Published in: Journal of physics. Condensed matter Vol. 19; no. 10; p. 103201 (81)
• Main Authors: GALPERIN, Michael, RATNER, Mark A, NITZAN, Abraham
• Format: Journal Article
• Language: English
• Published: Bristol Institute of Physics 14.03.2007
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronics; Exact sciences and technology; Molecular electronics, nanoelectronics; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Tunneling; Degrees of freedom; Tunnel effect; Vibronic interaction; Microscopic model; Electron tunneling spectroscopy; Repulsion interaction; Energy gap; Molecular electronics; Inelastic scattering; Fermi level; Hamiltonians; Electron interaction; Electron mobility
• ISSN: 0953-8984; 1361-648X
• DOI: 10.1088/0953-8984/19/10/103201

Transport of electrons in a single molecule junction is the simplest problem in the general subject area of molecular electronics. In the past few years, this area has been extended to probe beyond the simple tunnelling associated with large energy gaps between electrode Fermi level and molecular levels, to deal with smaller gaps, with near-resonance tunnelling and, particularly, with effects due to interaction of electronic and vibrational degrees of freedom. This overview is devoted to the theoretical and computational approaches that have been taken to understanding transport in molecular junctions when these vibronic interactions are involved.