Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure

This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI3 films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI3-based devices. An additive strategy was proposed to suppress ion migration, thereby facilit...

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Bibliographic Details
Published inChemical communications (Cambridge, England) Vol. 60; no. 78; pp. 10930 - 10933
Main Authors Su, Jiale, Yang, Zhenxin, Li, Xuanhe, Li, Fushun, Hu, Juntao, Chen, Nan, Zhang, Tao, Wang, Dengke, Zheng-Hong, Lu, Zhu, Qiang
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 26.09.2024
Subjects
Electric fields
Ion migration
Perovskites
Semiconductor devices
Thin film transistors
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Summary:This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI3 films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI3-based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI3-based devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1359-7345
1364-548X
1364-548X
DOI:10.1039/d4cc03446e