Magnetic tunnel junctions using reactively sputtered Al2O3 barriers

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 41; no. 10; pp. 2658 - 2660
Main Authors TSUNODA, Takaaki, MAURI, Daniele
Format Conference Proceeding Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.10.2005
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Magnetism
Materials science
Other topics in materials science
Physics
target voltage
Reactive sputtering
Alumina
magnetic tunnel junction (MTJ)
Sputtering
Aluminium oxides
Magnetic properties
Tunnels
Aluminum oxide
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More Information
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2005.854939