Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer

Femtosecond laser pulses are focused on a thin film of Ge2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickne...

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Published inOptics express Vol. 19; no. 18; pp. 16975 - 16984
Main Authors Tseng, Ming Lun, Chen, Bo Han, Chu, Cheng Hung, Chang, Chia Min, Lin, Wei Chih, Chu, Nien-Nan, Mansuripur, Masud, Liu, Ai Qun, Tsai, Din Ping
Format Journal Article
LanguageEnglish
Published United States 29.08.2011
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Summary:Femtosecond laser pulses are focused on a thin film of Ge2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1094-4087
DOI:10.1364/OE.19.016975