Carrier-envelope phase-controlled quantum interference of injected photocurrents in semiconductors

We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth),...

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Bibliographic Details
Published inPhysical review letters Vol. 92; no. 14; p. 147403
Main Authors Fortier, T M, Roos, P A, Jones, D J, Cundiff, S T, Bhat, R D R, Sipe, J E
Format Journal Article
LanguageEnglish
Published United States 09.04.2004
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Summary:We demonstrate quantum interference control of injected photocurrents in a semiconductor using the phase stabilized pulse train from a mode-locked Ti:sapphire laser. Measurement of the comb offset frequency via this technique results in a signal-to-noise ratio of 40 dB (10 Hz resolution bandwidth), enabling solid-state detection of carrier-envelope phase shifts of a Ti:sapphire oscillator.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.92.147403