Current-voltage characteristics of n-ZnO/p-GaN heterojunction grown by pulsed laser deposition

c-ZnO epitaxial layer is grown on c-oriented p-GaN/Sapphire template using pulsed laser deposition technique. A thorough high-resolution x-ray diffraction study reveals high crystalline quality of the grown layer. Photoluminescence (PL) spectroscopy on the ZnO film shows the emergence of a near band...

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Bibliographic Details
Published inAIP conference proceedings Vol. 2995; no. 1
Main Authors Arora, Simran, Dhar, Subhabrata
Format Journal Article Conference Proceeding
LanguageEnglish
Published Melville American Institute of Physics 12.01.2024
Subjects
Contact resistance
Crystal defects
Current voltage characteristics
Electrical measurement
Epitaxial growth
Heterojunctions
Photoluminescence
Pulsed laser deposition
Pulsed lasers
Sapphire
Zinc oxide
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Summary:c-ZnO epitaxial layer is grown on c-oriented p-GaN/Sapphire template using pulsed laser deposition technique. A thorough high-resolution x-ray diffraction study reveals high crystalline quality of the grown layer. Photoluminescence (PL) spectroscopy on the ZnO film shows the emergence of a near band edge (NBE) peak at 3.28 eV and a broad defect related yellow luminescence (YL) band at 2.2 eV. Ni/Au and Ti/Au contact pads are made on p-GaN and n-ZnO sides, respectively. These are found to provide good ohmic contacts for the respective semiconductors. Finally, current-voltage measurements between the GaN and ZnO side contacts are found to show good rectifying behavior.
Bibliography:ObjectType-Conference Proceeding-1
SourceType-Conference Papers & Proceedings-1
content type line 21
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0178357