Plasmon grating-gate devices have potential as tunable terahertz detectors

The grating area of these devices is typically on the order of several millimeters, much larger than a normal FET, to match diffraction-limited terahertz beam-spot sizes (see Fig. 2).2 While the devices we study are currently based on high-quality aluminum gallium arsenide/gallium arsenide quantum w...

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Published inLaser focus world Vol. 44; no. 1; pp. 131 - 132
Main Authors Shaner, Eric A, Grine, Albert D, Reno, John L, Wanke, Mike C, Allen, S James
Format Magazine Article
LanguageEnglish
Published Tulsa Endeavor Business Media 01.01.2008
Subjects
Electric fields
Frequencies
Gallium arsenide
R&D
Research & development
Studies
Temperature
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Summary:The grating area of these devices is typically on the order of several millimeters, much larger than a normal FET, to match diffraction-limited terahertz beam-spot sizes (see Fig. 2).2 While the devices we study are currently based on high-quality aluminum gallium arsenide/gallium arsenide quantum wells, we expect that grating-gate detectors can be made in any material system that supports FET fabrication (such as silicon). Many design parameters are available; a design that optimizes material and material structure may potentially pay off in a terahertz spectroscopic imaging system for applications including homeland security, environmental sensing, manufacturing inspection, and combustion engineering in solid fuel rockets (see www.laserfocusworld.com/articles/28940).
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ISSN:1043-8092