Influence of the phosphorous precursors on the structure and properties of the SiO2-P2O5 sol-gel films

• Published in: Journal of Optoelectronics and Advanced Materials Vol. 9; no. 5; pp. 1407 - 1410
• Main Authors: Vasiliu, C, Grigorescu, C, Pavelescu, G, Predoana, L, Todan, L, Gartner, M, Anastasescu, M, Negrila, C, Logofatu, C, Moldovan, A, Zaharescu, M
• Format: Journal Article
• Language: English
• Published: 01.05.2007
• ISSN: 1454-4164

Thin films in the SiO2-P2O5 system are intensely studied due to their applications in microelectronics, sensing, nanophotonics, optoelectronics and as ionic conductors. Sol-gel is the most used method for preparation of such films. Previous studies established the very low reactivity of the phosphorous alkoxides and the high tendency of the phosphorous oxide to volatilise at thermal treatment. In order to identify the most appropriate precursor for obtaining layers with desired composition and properties a systematic study of the sol-gel film preparation using different phosphorous precursors was carried out. The films were deposited on ITO/SiO2 coated glass substrates at room temperature. To check the influence of the type of precursors on the layers thermal stability and properties a post deposition annealing was performed at temperatures of 150 and 200 deg C. The film characterization was carried out using various techniques as Spectroscopic Ellipsometry (SE), X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR).