High mobility NMOSFET structure with high-κ dielectric

• Published in: IEEE electron device letters Vol. 26; no. 10; pp. 713 - 715
• Main Authors: PASSLACK, Matthias, DROOPAD, Ravi, RAJAGOPALAN, Karthik, ABROKWAH, Jonathan, GREGORY, Rich, NGUYEN, Danh
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.10.2005
• Subjects: Applied sciences; Channels; Dielectrics; Electrical resistivity; Electron mobility; Electronics; Exact sciences and technology; Gallium arsenide; Indium gallium arsenides; Microelectronic fabrication (materials and surfaces technology); Molecular beam epitaxy; Molecular structure; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; MOSFET; Charge carrier density; Charge carrier mobility; high-κ dielectrics; MOSFETs; Enhancement mode; Microelectronic fabrication; Sheet resistivity; Strained layer; Molecular beam epitaxy; Electron mobility; High k dielectric; NMOS technology
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2005.856707

High- Kappa NMOSFET structures designed for enhancement mode operation have been fabricated with mobilities exceeding 6000 cm super(2)/Vs. The NMOSFET structures which have been grown by molecular beam epitaxy on 3-in semi-insulating GaAs substrate comprise a 10 nm strained InGaAs channel layer and a high- Kappa dielectric layer ( Kappa approximately equal to 20). Electron mobilities of >6000 and 3822 cm super(2)/Vs have been measured for sheet carrier concentrations n sub(s) of 2-310 super(12) and approximately equal to 5.8510 super(12) cm super(-2), respectively. Sheet resistivities as low as 280 Omega /sq. have been obtained.