Monolithic fabrication of 2 × 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

In this letter, we report the fabrication of 2 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO sub(2) quantum-well intermixing technique. The switches have low insertion loss to be about...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 13; no. 12; p. 1292
Main Authors Qiu, B.C, Liu, X.F, Ke, M.L, Lee, H.K, Bryce, A.C, Aitchison, J.S, Marsh, J.H, Button, C.B
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.12.2001
Subjects
Amplifiers
Chip formation
Extinction
Modulators
Noise levels
Photonics
Quantum wells
Switches
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Summary:In this letter, we report the fabrication of 2 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO sub(2) quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.969885