Improved reliability of AlGaN-GaN HEMTs using an NH3 plasma treatment prior to sin passivation
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Published in | IEEE electron device letters Vol. 26; no. 4; pp. 225 - 227 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.04.2005
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2005.844694 |