Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of the Si(111)-7 x 7 surface in illuminated slightly doped crystals

Physical properties of the Si(111)-7 x 7 surface of low-doped n- and p-type Si samples are studied in the liquid helium temperature region by scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination com...

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 24; no. 39; pp. 1 - 5
Main Authors Odobescu, A B, Zaitsev-Zotov, S V
Format Journal Article
LanguageEnglish
Published 03.10.2012
Subjects
Bending
Condensed matter
Energy gap
Illumination
Liquid helium
Microscopy
Physical properties
Spectroscopy
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Summary:Physical properties of the Si(111)-7 x 7 surface of low-doped n- and p-type Si samples are studied in the liquid helium temperature region by scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination completely removes the band bending near the surface and restores the initial population of the surface states. Our results indicate the existence of the energy gap 2[Delta] = 40 + or - 10 meV in the intrinsically populated Si(111)-7 x 7 surface.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/24/39/395003