Si(100)-2 x 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

Detailed low temperature scanning tunneling microscope images of the Si(100)-2 x 1-H surface show a remarkable contrast inversion between filled- and empty-state images where the hydrogen dimer rows appear bright for filled-state images and dark for empty-state images. This contrast inversion origin...

Full description

Saved in:
Bibliographic Details
Published inSurface science Vol. 632; pp. L13 - L17
Main Authors Yap, T L, Kawai, H, Neucheva, O A, Wee, A TS, Troadec, C, Saeys, M, Joachim, C
Format Journal Article
LanguageEnglish
Published 01.02.2015
Subjects
Atomic structure
Channels
Dimers
Image contrast
Inversions
Microscopes
Scanning
Tunneling
Online AccessGet full text

Cover

More Information
Summary:Detailed low temperature scanning tunneling microscope images of the Si(100)-2 x 1-H surface show a remarkable contrast inversion between filled- and empty-state images where the hydrogen dimer rows appear bright for filled-state images and dark for empty-state images. This contrast inversion originates from the change in the dominant surface states and their coupling to the tip apex and the bulk silicon channels as a function of the bias voltage: dimer Si-Si bonding states dominate the filled-state images and valley states associated with Si-Si anti-bonding states dominate the empty-state images. Care is required when constructing and interpreting the atomic structure of dangling-bond structures on the Si(100)-2 x 1-H surface.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0039-6028
DOI:10.1016/j.susc.2014.10.016