An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

• Published in: Chinese physics B Vol. 23; no. 8; pp. 087201 - 1-087201-5
• Main Authors: Cao, Meng-Yi, Lu, Yang, Wei, Jia-Xing, Chen, Yong-He, Li, Wei-Jun, Zheng, Jia-Xin, Ma, Xiao-Hua, Hao, Yue
• Format: Journal Article
• Language: English
• Published: 01.08.2014
• Subjects: Aluminum gallium nitrides; Computer simulation; Fingers; Gallium nitrides; High electron mobility transistors; Mathematical models; Radio frequencies; Semiconductor devices
• ISSN: 1674-1056; 1741-4199
• DOI: 10.1088/1674-1056/23/8/087201

In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I-V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4- mu m long and 125- mu m wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10 x 125 mu m)). The improved large signal model simulates the I-V characteristic much more accurately than the original one. and its transconductance and RF characteristics are also in excellent agreement with the measured data.