A 75 GHz 13.92 dBm InP DHBT cascode power amplifier

A 75 GHz monolithic-microwave integrated-circuit (MMIC) four- fingers cascode power amplifier in InP double heterojunction bipolar transistors (DHBT) technology with an f(max) about 150 GHz was reported. The amplifier has 15x4 mu m(2) total emitter area and exhibits a power gain of 12.3 dB at 75 GHz...

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Bibliographic Details
Published inHong wai yu hao mi bo xue bao Vol. 31; no. 4; pp. 294 - 301
Main Authors Cao, Yu-Xiong, Su, Yong-Bo, Wu, Dan-Yu, Jin, Zhi, Wang, Xian-Tai, Liu, Xin-Yu
Format Journal Article
LanguageChinese
Published 01.08.2012
Subjects
Amplifiers
Coplanar waveguides
Fingers
Heterojunction bipolar transistors
Indium phosphides
Infrared
Noise levels
Power amplifiers
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Summary:A 75 GHz monolithic-microwave integrated-circuit (MMIC) four- fingers cascode power amplifier in InP double heterojunction bipolar transistors (DHBT) technology with an f(max) about 150 GHz was reported. The amplifier has 15x4 mu m(2) total emitter area and exhibits a power gain of 12.3 dB at 75 GHz with 13.92 dBm output saturated power. The amplifier achieves a peak output power of 14.53 dBm with 2 dBm input power at 72.5 GHz. The MMIC adopts coplanar waveguide (CPW) structure as the transmission line structure with area of 1.06x0.75 mm(2).
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ISSN:1001-9014
DOI:10.3724/SP.J.1010.2012.00294