Hopping Al atom on Si(111) 7 X 7 surface studied by scanning tunneling microscopy

Adsorption of Al atoms on the Si(111) 7 X 7 surface was investigated by STM at room temperature. The adsorbed Al atom displaced a Si center adatom on the surface, and the expelled Si atom diffused inside a half unit cell. The adsorbed Al atom hopped among center adatom sites with a frequency of abou...

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Published inPhysica Status Solidi (b) Vol. 241; no. 7; pp. 1665 - 1668
Main Authors Uchida, H, Kuroda, T, Mohamad, Fariza B, Kim, J, Kashiwagi, K, Nishimura, K, Inoue, M
Format Journal Article
LanguageEnglish
Published 01.06.2004
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Summary:Adsorption of Al atoms on the Si(111) 7 X 7 surface was investigated by STM at room temperature. The adsorbed Al atom displaced a Si center adatom on the surface, and the expelled Si atom diffused inside a half unit cell. The adsorbed Al atom hopped among center adatom sites with a frequency of about 0.01s-1. (
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ISSN:0370-1972
DOI:10.1002/pssb.200304687