Temperature-Dependent Reduction of Epitaxial Ce1-xPrxO2-δ (x = 0-1) Thin Films on Si(111): A Combined Temperature-Programmed Desorption, X-ray Diffraction, X-ray Photoelectron Spectroscopy, and Raman Study

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Bibliographic Details
Published inJournal of physical chemistry. C Vol. 117; no. 47; pp. 24851 - 24857
Main Authors ZOELLNER, Marvin Hartwig, GANG NIU, JHANG, Jin-Hao, SCHAEFER, Andreas, ZAUMSEIL, Peter, BAUMER, Marcus, SCHROEDER, Thomas
Format Journal Article
LanguageEnglish
Published Columbus, OH American Chemical Society 28.11.2013
Subjects
Chemistry
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
General and physical chemistry
General, apparatus
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Surface physical chemistry
Gas absorption
Temperature dependence
Stoichiometry
Annealing
Epitaxial layers
Vacancies
Oxide layer
Desorption
XRD
Microelectronics
Raman spectroscopy
Thin films
Mixed layer
Lamellar structure
Molecular beam epitaxy
Catalysis
Redox system
X-ray photoelectron spectra
Crystal structure
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ISSN:1932-7447
1932-7455
DOI:10.1021/jp4082867