Tunneling time correction to the intersubband optical absorption in a THz laser-dressed GaAs/AlxGa1―x As quantum well

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Bibliographic Details
Published inThe European physical journal. B, Condensed matter physics Vol. 80; no. 1; pp. 73 - 82
Main Authors NICULESCU, E. C, RADU, A
Format Journal Article
LanguageEnglish
Published Les Ulis EDP Sciences 01.03.2011
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wells
Gallium arsenides
Energy levels
Tunnel effect
Subband
Absorption coefficients
Relaxation time
Relaxation
Coherent radiation
High field
Absorption spectra
Optical absorption
Aluminium arsenides
External fields
Interband transitions
Quantum wells
Theoretical study
Line widths
Optoelectronic devices
Low intensity
Excited states
III-V compound
Resonant states
Electric field effects
Nanostructured materials
III-V semiconductors
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ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2011-10707-0