High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate

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Bibliographic Details
Published inElectronics letters Vol. 44; no. 23; pp. 1359 - 1360
Main Authors ARAI, M, FUJISAWA, T, KOBAYASHI, W, NAKASHIMA, K, YUDA, M, KONDO, Y
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 06.11.2008
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Fabry-Perot resonators
VPE
Semiconductor lasers
Laser diodes
Waveguide lasers
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20082657