2.33 μm-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

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Bibliographic Details
Published inElectronics letters Vol. 43; no. 21; pp. 1143 - 1145
Main Authors SATO, T, MITSUHARA, M, KONDO, Y
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 08.10.2007
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Quantum well lasers
Multiple quantum well
VPE
Semiconductor lasers
Output power
MOVPE method
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20072257