In situ SiN passivation of AIGaN/GaN HEMTs by molecular beam epitaxy

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Bibliographic Details
Published inElectronics letters Vol. 43; no. 14; pp. 779 - 780
Main Authors HEYING, B, SMORCHKOVA, I. P, COFFIE, R, GAMBIN, V, CHEN, Y. C, SUTTON, W, LAM, T, KAHR, M. S, SIKORSKI, K. S, WOJTOWICZ, M
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 05.07.2007
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Performance evaluation
High electron mobility transistor
Microelectronic fabrication
In situ
Molecular beam epitaxy
Metallizing
PECVD
Wafer
Passivation
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ISSN:0013-5194
1350-911X
DOI:10.1049/el:20071211