Switching Characteristics of Ru/HfO2/TiO2―x/Ru RRAM Devices for Digital and Analog Nonvolatile Memory Applications
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Published in | IEEE electron device letters Vol. 33; no. 5; pp. 706 - 708 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.05.2012
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Subjects | |
Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2012.2188775 |