On the c-Sila-SiO2 Interface in Hyperthermal Si Oxidation at Room Temperature

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Bibliographic Details
Published inJournal of physical chemistry. C Vol. 116; no. 41; pp. 21856 - 21863
Main Authors KHALILOV, U, POURTOIS, G, DUIN, A. C. T. Van, NEYTS, E. C
Format Journal Article
LanguageEnglish
Published Columbus, OH American Chemical Society 18.10.2012
Subjects
Applied sciences
Electronics
Exact sciences and technology
Materials
MOSFET
Bond length
Semiconductor materials
Chemical bond
Solid solid interface
Bond angle
Molecular dynamics method
Roughness
Non stoichiometric composition
Solar cell
Thickness
Interface structure
Field effect transistor
Compressive stress
Silicon oxides
Oxidation
Silicon
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ISSN:1932-7447
1932-7455
DOI:10.1021/jp306920p