Monte Carlo Simulation of Hot Carrier Transport in Heterogeneous Ge/AlxGa1―xAs (0 ≤ x ≤0.8) Multilayer Avalanche Photodiodes

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 60; no. 10; pp. 3435 - 3441
Main Authors CHING KEAN CHIA, GOUTAM KUMAR DALAPATI
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.10.2013
Subjects
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Materials
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ternary compound
Monte Carlo method
Gallium arsenides
Transport properties
Ionization coefficient
Multiple layer
Avalanche breakdown
Numerical method
III-V compound
Transport process
Electric field
Disruptive voltage
photodiodes
Avalanche photodiodes
numerical analysis
Optoelectronic device
Homojunction
Hot carrier
Germanium
Properties of materials
Numerical simulation
Impact ionization
Phonon scattering
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More Information
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2275970